METHOD FOR PLASMA TREATMENT FOR WORK PIECE

摘要

PROBLEM TO BE SOLVED: To provide a method for plasma treatment for a work piece in which an electric damage to a semiconductor element such as a MOS transistor contained in a circuit pattern of a wafer caused during plasma treatment is reduced. SOLUTION: A work piece 15 is placed on a lower electrode 3 with a dielectric body 42 in between down with the surface on which a circuit pattern is formed, and plasma is generated in a vacuum chamber 1 to which the lower electrode 3 is provided, so that a stress layer on the surface on which a mechanical grinding process is performed is etched to remove. Since almost all of difference in potential between an upper electrode 2 and the lower electrode 3 is borne by the dielectric body 42, an electric damage to a semiconductor element containing element capacity such as a MOS transistor contained in the circuit pattern is reduced that much.