DOPING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT AND MANUFACTURING APPARATUS THEREOF AND DOPING EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To realize an ideal impurity concentration profile by a method using a laser irradiation at the time of the treatment of a doping of an Si wafer with Si chips and activation and to provide a technique to form electrodes on the rear of the Si chip. SOLUTION: When electrodes are formed on the rear of an Si chip formed on an Si wafer 1, a doping of dopants 27 and 27a to 27c to the chip 1 and an activation of these dopants 27 and 27a to 27c are performed by a heating using each heating means in the same high-vacuum chambers 11 and 11a.