PRODUCING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a producing method for a semiconductor device, with which the growth of the reactant of F and Ti on a Ti-containing film can be suppressed. SOLUTION: This producing method for a semiconductor device is provided with a process for forming an SiO2 film 3 on a TiN film 4, a process for exposing at least one part of the TiN film 4 by etching the SiO2 film 3 while using a fluorine-containing etching gas, a process for forming a coating film 21 on the exposed TiO film 4 and a process for exposing the TiN film 4 in an atmosphere. Thus, the growth of the reactant of F and Ti on the Ti-containing film can be suppressed.