发明名称 SEMICONDUCTOR TREATING METHOD AND EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To selectively control a deposition of materials to a semiconductor wafer 16 and an etching of the materials. SOLUTION: This treating equipment is a semiconductor treating equipment which comprises a shower head assembly 18 and a shower head plate assembly 17 having a plurality of holes 15 being extended through the shower head plate assembly 17. This assembly 17 has outside regions 19 and an inside region 21. First electrodes 20 are respectively formed on the regions 19 and a second electrode 22 is formed on the region 21. Insulators 24 are respectively arranged between the electrode 22 and the electrodes 21. A deposition of materials which are related to the electrodes 20 and the electrode 22 and an etching treatment of the materials are selectively performed by changing the flows of power to the electrodes 20 and the electrode 22.
申请公布号 JP2001196318(A) 申请公布日期 2001.07.19
申请号 JP20000347565 申请日期 2000.11.15
申请人 TEXAS INSTR INC <TI> 发明人 DAVID J ROSE
分类号 C23C16/455;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/205;H01L21/306 主分类号 C23C16/455
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