| 摘要 |
PROBLEM TO BE SOLVED: To reduce the step on the boundary of the effective image pickup region and the non-image pickup region of a solid-state image pickup device. SOLUTION: Insulating films 120 and 121 are formed on a non-image pickup region 100B of a semiconductor chip 100 and recessed parts 126 are formed in the upper surface of the film 121. Wiring films 123A to 123D are arranged in these recessed parts 126. Moreover, recessed parts 128 are formed on the upper surface of the film 121. Hereby, as steps due to the films 123a to 123D and a light-shielding film 125 on the peripheral parts of an effective image pickup region 100A of the chip 100 can be reduced, further planarizing of the surface of the chip 100 becomes possible in comparison with the conventional structure of the chip 100. As this result, light which is transmitted on-chip lenses 140 and color separation filters 130 and is made incident in a region 100A, can be properly fed to photosensors 111 which constitutes imaging pixels and the uniformity of the sensitivity and color of the light and the like can be modified.
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