Field effect transistor device with trench-shaped gate electrode

摘要

The FET device includes a semiconductor substrate (1) with a trench (2). An insulating layer (4) covers the walls of the trench. A conductive material (5) fills the trench and forms a gate electrode. A source region (6), a body region (7) and a drain region (10) are also formed. A highly doped region (8) is formed in the body region that is at least partially arranged under the source region and adjoins the source region. The source region extends from the first surface (3) of the semiconductor substrate (1), along the trench (2) and up to the highly doped region in the body region.