| 摘要 |
1,122,385. Circuits employing bi-stable magnetic elements. PLESSEY UK Ltd. 3 Dec., 1965 [7 Dec.. 1964], No. 49628/64. Heading H3B. A magnetic storage element comprises a thin film F of isotropic material having a rectangular hysteresis characteristic, parallel first and second word conductors U, V and an orthogonal digit conductor D being positioned in operative proximity. All three conductors are energized to write a binary " 1." The film may be of nickel-iron alloy which is deposited on to a glass or copper cylindrical former by evaporation, chemical deposition or electroplating, the first and second word conductors being subsequently threaded through the cylindrical former. A matrix store is shown in Fig. 3 in which a binary word may be stored magnetically along any of the cylindrical films F1-F9. To write a word a first and a second word conductor U, V common to a selected cylindrical film are pulsed at the same time as digit conductors D1, D2 are selectively energized. Coincident energization of the word conductors U, V establishes a circumferential flux in the film which is angularly deflected by current in a digit conductor to store a binary " 1 " at that location. The direction of current in a digit conductor is opposite to store a binary " 0 " in which case the circumferential flux is angularly deflected in the opposite direction. Alternatively a binary " 0 "is characterized by circumferential flux, the digit conductor being unenergized. For reading out the first and second word conductors are both energized in the reverse direction, an output of characteristic polarity being induced in the digit conductor if a " 1 " is stored. An output of opposite polarity is obtained if a binary " 0 " was stored by the method involving flux deflection. |
