| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in junction depth of source and drain diffusion layers connected to a second storage node electrode via an embedded strap in a high-temperature process, after forming the buried strap. SOLUTION: The average particle size of a second storage node electrode 82 is set larger than that of a buried strap 10, thus suppressing diffusion of impurities in the second storage node electrode 82 to the source and drain diffusion layers 17, and increase injunction depth. |
