| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device. SOLUTION: Conductive bumps 32 are formed so as to be placed on a semiconductor die 11. The conductive bump 32 is generally reduced in lead content and made to flow at a temperature of 260 deg.C or below, and a problem related to alpha particles is reduced. As an example, the conductive bump 32 mainly contains tin 20 and is equipped with a comparatively thin lead layer 30. Lead 30 and a part of tin 20 interact with each other to form a solder of comparatively low-melting point close to the eutectic point of lead and tin. Most of tin 20 is left unreacted, and a standoff can be formed between the semiconductor die 11 and a packaging board 42. Other metal and impurities can be used for improving the conductive bump 32 in mechanical and electrical properties.</p> |
