SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD TERERFOR

摘要

PROBLEM TO BE SOLVED: To manufacture a crystalline semiconductor film, where the position and size of crystal grain are controlled, and to realize a first TFT by using the crystalline semiconductor film as a TFT channel forming region. SOLUTION: An organic resin film 2 of a prescribed shape is formed on a substrate 1, and an inorganic insulating film 3 and an amorphous semiconductor film are formed. The amorphous semiconductor film is crystallized through laser annealing. By appropriately adjusting the material and thickness of the organic resin film 2 or an inorganic insulating film having a prescribed shape, the cooling speed of a semiconductor film is reduced to form a first region 4a of large crystal particle size.