| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that a large number of unpaired bonding hands are formed at crystal grain boundaries, when a crystalline semiconductor film composed of crystal grains is low in orientation properties, and the crystal semiconductor film is deteriorated in carrier (electron, hole) transfer properties. SOLUTION: This manufacturing method comprises a first process in which the surface of a substrate is exposed to a plasma atmosphere that contains halogen, a second process in which an amorphous semiconductor film is formed on the substrate, a third process in which a layer that contains a catalytic element which promotes the crystallization of the amorphous semiconductor film is formed on the amorphous semiconductor film, a fourth process in which the amorphous semiconductor film is turned into a crystalline semiconductor film through a first thermal treatment, a fifth process in which the crystalline semiconductor film is selectively removed into inland-like crystalline semiconductor films, a sixth process in which a gate insulating film is formed on the island- like crystalline semiconductor films, and a seventh process in which the substrate is subjected to a second thermal treatment in an oxidizing atmosphere after the sixth process.</p> |
