TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, THIN MAGNETIC FILM HEAD, MEMORY ELEMENT, AND MANUFACTURING METHOD FOR THEM

摘要

PROBLEM TO BE SOLVED: To prevent formation of extra current paths which do not contribute to tunnel magnetoresistive effect. SOLUTION: A TMR element 3 has a free layer 11 formed on a lower gap layer 2, a tunnel barrier layer 12 formed on this free layer 11, and a pinned layer 13 formed on this tunnel barrier layer 12. The pinned layer 13 and the tunnel barrier layer 12 have a side wall 14 formed by etching. The TMR element 3 comprises a redeposited layer 15 of an oxidized substance redeposited on the side wall 14 by further etching.