| 摘要 |
PROBLEM TO BE SOLVED: To control the depth of etching when a contact hole is out of low layer wiring in the case of etching when forming the contact hole. SOLUTION: An etching stop film having an etching selective ratio different from a layer insulating film on prescribed etching conditions at the intermediate height of low layer wiring and high layer wiring is formed together with both the low layer wiring and the high layer wiring inside the layer insulating film on a wafer. Then, the contact hole is formed from the surface of the layer insulating film onto the upper layer wiring on the condition that the etching selective ratio of the layer insulating film is higher than that of the etching stop film. |
