Semiconductor device with high-speed switching circuit implemented by mis transistors and process for fabrication thereof

摘要

An n-channel type MIS field effect transistor is fabricated on a p-type well defined in a standard p-type silicon substrate, and is expected to respond to a high- frequency signal, wherein a heavily- doped p-type well contact region is formed outside of the p-type well for increasing the substrate resistance, and a capacitor is coupled to the heavily-doped p-type well contact region for increasing the impedance so that the insertion loss is reduced by virtue of the large impedance of the silicon substrate.