发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which ensures improved edge roughness of a resist pattern in the production of a semiconductor device and is excellent in preservability at room temperature and in line density dependency. SOLUTION: The positive type photoresist composition contains (A) an acid generating compound represented by a specified structure, (B) an acid decomposable resin containing at least specified silicon-containing repeating units or repeating units with a specified structure and having solubility to an alkali developing solution increased by the action of the acid and (C) a specified solvent.
申请公布号 JP2001194787(A) 申请公布日期 2001.07.19
申请号 JP20000001894 申请日期 2000.01.07
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;MIZUTANI KAZUYOSHI
分类号 G03F7/039;C08F220/00;C08F230/08;C08K5/00;C08K5/06;C08K5/07;C08K5/101;C08K5/109;C08K5/15;C08K5/151;C08L43/04;G03F7/004;G03F7/075;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址