发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which ensures improved edge roughness of a resist pattern in the production of a semiconductor device and is excellent in preservability at room temperature and in line density dependency. SOLUTION: The positive type photoresist composition contains (A) an acid generating compound represented by a specified structure, (B) an acid decomposable resin containing at least specified silicon-containing repeating units or repeating units with a specified structure and having solubility to an alkali developing solution increased by the action of the acid and (C) a specified solvent. |
申请公布号 |
JP2001194787(A) |
申请公布日期 |
2001.07.19 |
申请号 |
JP20000001894 |
申请日期 |
2000.01.07 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
SATO KENICHIRO;MIZUTANI KAZUYOSHI |
分类号 |
G03F7/039;C08F220/00;C08F230/08;C08K5/00;C08K5/06;C08K5/07;C08K5/101;C08K5/109;C08K5/15;C08K5/151;C08L43/04;G03F7/004;G03F7/075;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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