| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a connection substrate, the connection substrate, the manufacturing method of a semiconductor device and the semiconductor device, which can narrow the wiring width and the pitch, realize multilayer wiring, can reduce the influence of the radiated heat from a heating tool, even at mounting a semiconductor chip and prevent the occurrence of faults, such as disconnection due to external force. SOLUTION: First metal wirings 16 are formed on the surface of a first glass substrate 28. An insulating film 32 is formed on the first metal wirings 16 and second metal wiring 22 on the upper face of an insulating film 32. Since the first glass substrate 28 does not have flexibility in the connection substrate 12, deformations do not occur. Thus, the glass substrate does not move in the direction of the depth of field in a halfway process where metal wiring is formed, in an exposure process, for example,. Thus, narrow exposure is realized, and the metal wiring of the narrow pitch and narrow width can be formed. |
