发明名称 |
METHOD FOR PRODUCING LUMINOUS STRUCTURES ON SILICON SUBSTRATE |
摘要 |
The invention relates to a method for producing light-emitting structures on silicon substrate. A defined area of the pre-doped silicon substrate is contradoped by means of focussed ion implantation. A lateral npn or pnp junction region is produced by over-compensating the original charge carrier density. Light is emitted in the reverse-biased pn or np junction region when said region is flown through by a current. Masking steps can be totally avoided by using focussed ion implantation for producing light-emitting structures. |
申请公布号 |
WO0152331(A1) |
申请公布日期 |
2001.07.19 |
申请号 |
WO2001EP00034 |
申请日期 |
2001.01.04 |
申请人 |
RUBITEC GESELLSCHAFT FUER INNOVATION UND TECHNOLOGIE DER RUHR-UNIVERSITAET BOCHUM MBH;ROECKEN, HEINER |
发明人 |
ROECKEN, HEINER |
分类号 |
H01L33/00;H01L33/34 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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