发明名称 |
IN-SITU CHAMBER CLEANING METHOD FOR SUBSTRATE PROCESSING CHAMBER USING HIGH DENSITY INDUCTIVELY COUPLED FLUORINE PLASMA |
摘要 |
A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.
|
申请公布号 |
US2001008138(A1) |
申请公布日期 |
2001.07.19 |
申请号 |
US19990262019 |
申请日期 |
1999.03.04 |
申请人 |
DEMOS ALEX;SHUFFLEBOTHAM PAUL KEVIN;BARNES MICHAEL;NGUYEN HUONG;MCMILLIN BRIAN;BEN-DOR MONIQUE |
发明人 |
DEMOS ALEX;SHUFFLEBOTHAM PAUL KEVIN;BARNES MICHAEL;NGUYEN HUONG;MCMILLIN BRIAN;BEN-DOR MONIQUE |
分类号 |
C23C16/44;(IPC1-7):B08B6/00;C25F1/00 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|