Semiconducting device manufacturing method involves forming dielectric layer with contact hole on substrate, forming conductive layer, etching dielectric layer to defined thickness

摘要

The method involves forming a dielectric layer with a contact hole (30) on a substrate (1), forming a first conductive layer (41) connected to the substrate in the contact hole and removing the dielectric layer to a defined thickness from an exposed surface using a selective wet etching process with respect to the first conductive layer. Independent claims are also included for the following: a semiconducting device.