| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive-acting photoresist composition having high resolving power and forming a resist pattern whose side wall is perpendicular while preventing the trailing of the lower part of the pattern. SOLUTION: The positive-acting photoresist composition contains (a) a copolymer A having at least structural units of formulae I, II and III [where R1 and R2 are each H or methyl; R4 is alkyl, aralkyl, aryl or -Y-O-C(=0)-Z (Y is a 1-20C alkylene, and Z is a 1-20C alkyl, a 6-20C aryl or a 7-20C aralkyl); R3 is H or methyl; and X is a group having a saturated condensed polycyclic hydrocarbon or a saturated bridged cyclic hydrocarbon], (b) a compound which generates an acid when irradiated with active light or radiation and (c) a solvent. |
