| 摘要 |
PROBLEM TO BE SOLVED: To obtain the manufacturing method of a semiconductor device having a buried layer, which can miniaturize the dimension of the pattern of the buried layer and raises the dimensional accuracy of the pattern. SOLUTION: This manufacturing method is the manufacturing method of a semiconductor device being constituted of a silicon layer of an impurity concentration which is controlled by an ion implantation unit and in the manufacturing method, monohydric or multicharged cations are implanted in a silicon substrate 1 to form an ion implanted layer 2 on the conditions of a dose of 5.0×1014 cm-2 and less and an energy of 150 KeV and less and after that, a silicon vapor- phase epitaxial growth is performed in the extent of a temperature of 1000 deg.C to 1350 deg.C.
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