| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method for a gate electrode of a semiconductor device and an etching method for an organic material film, with which a superior side-wall protecting effect is obtained and counter-base material selectivity and etching rate are improved, and in which there is no pattern density dependence in the pattern dimension, and a method for adjusting dimension of a resist mask pattern in which there is no pattern dependency, in the semiconductor device in which an organic material film is provided on a semiconductor substrate. SOLUTION: When a semiconductor device provided with at least an organic material film on a semiconductor substrate is etched to form a gate electrode, or the organic material film is etched, or when the dimension of a resist mask pattern is adjusted, a process wherein the organic material film is etched by using an etching gas atmosphere containing oxygen-contained gas, chlorine- contained gas and bromine-contained gas, is contained, thereby solving the problem.
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