| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of a charge in a charge transfer means, adjoining a photoelectric conversion part of a photoelectric conversion device and to reduce or suppress generation of a dark current in the photoelectric conversion part. SOLUTION: In a photoelectric conversion device of a structure where the device has at least a photoelectric conversion part 201, which generates charge by an optical pumping and stores the charge, and a charge transfer means 202 adjoining the part 201 and the means 202 consists of a p-type conduction d semiconductor base body 401, an insulating film 403 provided on the base body 401 and a conductor 402 provided on the film 403, the value of the work function of the conductor 402 is set at least higher than or lower than the value of the work function of an intrinsic polycrystalline semiconductor material, consisting of a semiconductor material which is the same material as that for the base body 401.
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