| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a silicide film that is capable of lessening a contact resistance and restraining a junction leakage current. SOLUTION: A silicide film such as a cobalt silicide film 13 is formed on a diffusion layer such as a high-concentration source drain diffusion layer 10b, and then a metal film such as a titanium film 14 or the like is formed on the silicide film. A plasma nitride film 15 serving as an etching stopper film and an interlayer insulating film 16 are formed on the substrate, and then a connection hole 17 is bored in the interlayer insulating film 16 without biting into the silicide film 13. The silicide film 13 can be prevented from being lessened in thickness, and a titanium silicide film is formed on the bottom of the connection hole, by which a semiconductor device of this constitution can be lessened in contact resistance. Furthermore, a natural oxide film left on the diffusion layer is removed through a reverse sputtering method by the use of helium plasma before a silicifying process is carried out, by which the surface of a diffusion layer can be flattened, and a junction leakage current can be also restrained.
|
