发明名称 |
SEMICONDUCTOR DEVICE AND METHDO OF MANUACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is restrained from malfunctioning or increasing in a leakage current and a manufacturing method therefor. SOLUTION: A semiconductor device is equipped with a semiconductor substrate 1 provided with a primary surface, an element isolating region 10 provided on the primary surface of the substrate 1, an insulating layer 6 provided on the primary surface of the substrate 1, and a first semiconductor layer 11 provided in a prescribed region of the element isolating region 10 which is cut when a contact hole 13 is formed.
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申请公布号 |
JP2001196325(A) |
申请公布日期 |
2001.07.19 |
申请号 |
JP20000002357 |
申请日期 |
2000.01.11 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NAKAHATA TAKUMI;MARUNO SHIGEMITSU;FURUKAWA TAISUKE;TOKUDA YASUKI |
分类号 |
H01L21/76;H01L21/28;H01L21/336;H01L21/768;H01L21/8234;H01L23/522;H01L27/08;H01L27/088;H01L29/78;(IPC1-7):H01L21/28;H01L21/823 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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