| 摘要 |
<p>A sputtering target, wherein a part, in a grinding direction or grinding tangential direction, on the front surface or both surfaces of the target is parallel to a warping direction after the target is bonded to a backing plate or falls within an angle range of +/-45 DEG of the warping direction, or, when the target is rectangular, falls within a range of an angle formed by a warping direction after bonding of the target to the backing plate and a diagonal; the sputtering target being capable of effectively reducing or preventing cracking due to a difference in a thermal expansion coefficient, especially during the production of a ceramic target, that is, during a target-to-backing plate joining process, and also effectively reducing or preventing a similar cracking or warping at sputtering. <IMAGE></p> |
