FERROELECTRIC DEVICE AND SEMICONDUCTOR DEVICE

摘要

Disclosed herein is a ferroelectric capacitor of the type having an top electrode, a ferroelectric thin film, and a bottom electrode, characterized in that said ferroelectric thin film is a perovskite-type oxide containing Pb and said upper and bottom electrodes contain an intermetallic compound composed of Pt and Pb. Disclosed also herein is an electronic device provided with said ferroelectric capacitor. The present invention is designed to solve the following problems. In a non-volatile ferroelectric memory (FeRAM), a degraded layer occurs near the interface between the PZT and the electrode due to hydrogen evolved during processing or due to diffusion of Pb from the PZT into the electrode. A stress due to difference in lattice constant occurs in the interface between the electrode and the ferroelectric thin film. The degraded layer and the interfacial stress deteriorate the initial polarizing characteristics of the ferroelectric capacitor and also greatly deteriorate the polarizing characteristics after switching cycles. <IMAGE>