| 摘要 |
PROBLEM TO BE SOLVED: To provide a method producing a compound semiconductor single crystal, which comprises growing a crystal by gradually solidifying in the vertical direction from the surface of a melt without using a seed crystal and by which the single crystal free from a polycrystal and a twin crystal can be produced with a good yield. SOLUTION: In a method of growing a compound semiconductor single crystal, which comprises charging a raw material of the compound semiconductor into a crucible, then arranging the crucible in a vertical heating furnace, heating the raw material by a heater to melt the raw material, and gradually solidifying it from the surface of the melt of the raw material without using a seed crystal, a portion of the raw material is allowed to remain in the solid state in the melt of the raw material so as to cause the formation of a nucleus at the surface of the melt of the raw material and to grow a crystal starting from the nucleus, thereby, the melt is prevented from becoming supercooled stat and generating the polycrystal and twin crystal.
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