发明名称 MgO buffer layers on rolled nickel or copper as superconductor substrates
摘要 Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.
申请公布号 US6261704(B1) 申请公布日期 2001.07.17
申请号 US19980096558 申请日期 1998.06.12
申请人 UT-BATTELLE, LLC 发明人 PARANTHAMAN MARIAPPAN;GOYAL AMIT;KROEGER DONALD M.;LIST, III FREDERIC A.
分类号 C30B23/02;H01L39/24;(IPC1-7):B05B5/12 主分类号 C30B23/02
代理机构 代理人
主权项
地址