发明名称 |
Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus |
摘要 |
A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.
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申请公布号 |
US6262418(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US19980177148 |
申请日期 |
1998.10.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HASHIMOTO KAZUHIKO;OKUYAMA MASANORI;KUBO RYUICHI;MUKAIGAWA TOMONORI |
分类号 |
G01J1/02;G01J5/02;G01J5/12;G01J5/34;(IPC1-7):G01J5/10 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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