发明名称 Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus
摘要 A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.
申请公布号 US6262418(B1) 申请公布日期 2001.07.17
申请号 US19980177148 申请日期 1998.10.22
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HASHIMOTO KAZUHIKO;OKUYAMA MASANORI;KUBO RYUICHI;MUKAIGAWA TOMONORI
分类号 G01J1/02;G01J5/02;G01J5/12;G01J5/34;(IPC1-7):G01J5/10 主分类号 G01J1/02
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