| 摘要 |
A method of manufacturing a capacitor of a dynamic random access memory cell is disclosed. The method includes forming a capacitor opening through a dielectric isolation interlayer to expose a buried contact area. A plug of conductive material is subsequently formed in a bottom portion of the capacitor opening and makes an electrical connection with the contact area. A conductive spacer is formed on the sidewall of the opening by depositing a conformal layer and anisotropically etching back, and such leaves a channel within the opening. A dielectric column is formed by filling the channel with dielectric material. The lateral surface of the dielectric column is then exposed by removing the laterally adjacent conductive spacer. Finally, first and second capacitor plates and a dielectric layer therebetween are formed within the capacitor opening and supported by the dielectric column, thereby completing the capacitor.
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