METHOD OF PRODUCING BASE PLATE FOR PIEZOELECTRIC DEVICE, BASE PLATE FOR PIEZOELECTRIC DEVICE AND SURFACE ACOUSTIC WAVE DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a base plate for a piezoelectric device and to obtain the base plate for the piezoelectric device and a surface acoustic wave device using the base plate, which are almost free from crystal defects or the like and low in dispersion of the propagating velocity. SOLUTION: This method of producing a base plate for a piezoelectric device comprises growing a La3Ga5SiO14 single crystal and processing the crystal into the base plate for the piezoelectric device. Concretely, each raw material is weighed in an amount in the range of the composition of 48.06 to 48.80 wt.% La2O3, 45.25 to 46.60 wt.% Ga2O3 and 5.21 to 6.19 wt.% SiO2, and then the raw materials are melted in a crucible and further the La3Ga5SiO14 single crystal C is pulled up and grown from the inside of the crucible.