| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method capable of suppressing secular change of sheet resistance value. SOLUTION: In the film deposition method for performing film deposition treatment where prescribed film is deposited on the surface of a wafer W by using high-melting-point metallic compound gas and reducing gas in a treatment chamber 4 capable of evacuation, oxidizing gas is allowed to flow through the treatment chamber in the course of or immediately after the film deposition treatment. By this method, the secular change of sheet resistance value can be remarkably suppressed.
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