发明名称 Method for forming semiconductor seed layers by high bias deposition
摘要 A method is provided for forming seed layers in a channel or via by applying a high bias to the material of the seed layer during deposition. This sputters off the seed layer overhang in order to reduce the electrical resistance of the seed layer, maintain its barrier effectiveness and enhance the subsequent filling of the channel or via by conductive materials.
申请公布号 US6261946(B1) 申请公布日期 2001.07.17
申请号 US19990227068 申请日期 1999.01.05
申请人 ADVANCED MICRO DEVICES, INC. 发明人 IACOPONI JOHN A.;BROWN DIRK;NOGAMI TAKESHI
分类号 H01L21/768;(IPC1-7):H01L21/31 主分类号 H01L21/768
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