| 摘要 |
A semiconductor device suitable for use in a flat display LCD according to an active matrix display type device comprising a-Si thin film transistor (TFT) elements is provided. The TFT which is a forward stagger type transistor is produced by, forming a light shielding film 2 and, after forming a source electrode 5, a drain electrode and a drain signal line 6a, and gate electrode 10 and a gate signal line 10a, the light shielding film 2 is removed excluding the area covered by those electrode and signal lines. The number of manufacturing steps of this type of TFT is reduced by this manufacturing method which results in a reduction in the manufacturing cost. Furthermore, the TFT manufactured by this method is provided with a higher aperture which improves its operating performance.
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