发明名称 PLASMA CVD SYSTEM
摘要 PROBLEM TO BE SOLVED: To improve the availability of a plasma CVD system by suppressing the deposition of film onto the part other than the surface of a substrate. SOLUTION: In the plasma CVD system, plasma is produced between a cathode and a substrate and reactant gas is decomposed by this plasma to deposit a thin film on the surface of the substrate. This system has a magnetic field generating means, and the plasma is confined so that the presence of the plasma is limited to the vicinity of the substrate by using at least the magnetic field generated by the magnetic field generating means.
申请公布号 JP2001192837(A) 申请公布日期 2001.07.17
申请号 JP20000005469 申请日期 2000.01.14
申请人 TDK CORP 发明人 MOROOKA HISAO;MATSUSE MITSUTAKA;SHINOHARA HISATO
分类号 H01L21/205;C23C16/505;H05H1/46 主分类号 H01L21/205
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