| 摘要 |
In a non-volatile semiconductor memory device, a binary counter is connected to a most significant bit portion of an address counter for successively generating addresses of rows of a memory cell array. The binary counter forcibly selects one of spare row lines, and permits a pre-program operation (program operation prior to data erasure) to be performed on memory cells connected to the selected one of spare row lines, when the pre-program operation has completely been performed on the memory cells of the rows of the memory cell array. In the pre-program operation, whether or not to verify data is determined on the basis of a coincidence signal outputted from a defective row address storing section.
|
