发明名称 |
Polysilicon capacitor having large capacitance and low resistance and process for forming the capacitor |
摘要 |
A process for forming capacitors in a semiconductor device. In one embodiment, a first insulating layer is deposited on the semiconductor device; a trench is formed in the insulating layer; a first low resistance metal layer is formed covering the interior surface of the trench; a first polysilicon layer is formed over the first low resistance metal layer; a first dielectric layer is formed over the first polysilicon layer; a second polysilicon layer is formed over the first dielectric layer; a second low resistance metal layer is formed over the second polysilicon layer; a third polysilicon layer is formed over the second low resistance metal layer; a second dielectric layer is formed over the third polysilicon layer; a fourth polysilicon layer is formed over the second dielectric layer; a third low resistance metal layer is formed over the fourth polysilicon layer until the trench is filled; the semiconductor device is planarized until the first, second and third low resistance metal layers are exposed above the trench; finally, capacitor leads are formed to the first, second, and third low resistance metal layers.
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申请公布号 |
US6261895(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US19990225043 |
申请日期 |
1999.01.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADKISSON JAMES W.;BRACCHITTA JOHN A.;RANKIN JED H.;STAMPER ANTHONY K. |
分类号 |
H01L21/02;H01L21/314;H01L21/334;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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