| 摘要 |
A method of forming a copper oxide film on a copper surface, particularly applicable to forming copper wiring interconnects in the semiconductor industry, allows copper surfaces to be etched more evenly than in conventional methods. The step of forming a copper oxide film on a copper surface comprises exposing the copper surface to a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have a pH of 8 to 10. A copper oxide surface can also be exposed to a solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have a pH of 10 to 11. When such a copper oxide surface is etched using acid or alkali, the exposed copper surface is smoother than conventional etching, resulting in better copper interconnect structures that can include conductive diffusion barriers.
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