发明名称 |
Method for fabricating a semiconductor device |
摘要 |
A semiconductor device comprising a dual polysilicon gate structure in which the P type polysilicon gate is connected with the N type polysilicon gate by a bilayer conductive wiring structure without any contact, thereby significantly contributing to high integration, and a method for fabricating the semiconductor device such that the production yield is improved.
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申请公布号 |
US6261882(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US19960773174 |
申请日期 |
1996.12.27 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM JAE KAP |
分类号 |
H01L23/522;B60N3/10;E05F5/00;H01L21/768;H01L21/8238;H01L23/528;H01L27/092;(IPC1-7):H01L21/336 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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