| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma process system advantageous in terms of cost, and capable of attaining a uniform plasma process even in the case that the load impedance of plasma produced in a reaction chamber varies. SOLUTION: A plurality of microwave introducing windows 2a, 2b are disposed in the upper wall 1a of a reaction chamber 1. Microwaves of identical electric power are applied to the microwave introducing windows 2a, e.g. two in number, located in equivalent positions in the positional relationship with a side wall 1b of the reaction chamber 1 and microwaves of dissimilar electric power are applied to the microwave introducing windows 2a, 2b, e.g. two in number, in the nonequivalent positional relationship. |
