| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a composition for polishing, capable of polishing a material having a high hardness such as a glass substrate material or a semiconductor substrate material at a high polishing rate, and providing no problem in the smoothness of the polishing, the uniformity, the generation of scratch wound and the residue of abrasive grains of the polishing agent. SOLUTION: This composition for polishing comprises the abrasive grains containing cerium oxide, a fluorine-containing compound having a hydrophilic group and a fluorinated hydrocarbon, and water, and the contents of the abrasive grains containing the cerium oxide, and the fluorine-containing compound are 0.1-20 wt.% and 0.005-2.0 wt.% respectively.</p> |
