| 摘要 |
A mark of a semiconductor device is formed of a molten trace obtained by selectively applying a laser to a ground back surface of a semiconductor substrate. Since the molten trace mark is formed in a form of a planarized surface on a back surface of a wafer or a chip which has been rendered uneven by grinding, visual recognition of the mark can be improved. Furthermore, since the mark is not deeply inscribed into the wafer or the chip, unlike the case of a dot mark, it is possible to maintain a die strength at a high level. In particular, when the molten trace mark is formed by using SHG-YAG laser, it is possible to suppress the depth of the layer from being thermally influenced, up to about several mum. As a result, it is possible to suppress thermal influence upon the inner circuit formed in a silicon chip and wiring formed therein.
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