发明名称 Voltage boosting circuit for semiconductor device
摘要 A voltage boosting circuit of a semiconductor device is disclosed. The voltage boosting circuit includes a voltage detector, an active kicker controller, and an active kicker. The voltage detector generates a detection signal after the determining whether a potential of the signal to be boosted is higher than a boost voltage target level. The active kicker controller generates an active kicker control signal in response to the detection signal and the clock signal. The active kicker drives the signal to be boosted in response to the active kicker control signal. The voltage detector includes a current source, a number of switching devices, a current compensating circuit, and an inverter circuit. The current compensating circuit provides a compensating current proportional to a power supply voltage.
申请公布号 US6262621(B1) 申请公布日期 2001.07.17
申请号 US20000559236 申请日期 2000.04.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON BAEK-YEONG
分类号 H01L27/04;G05F3/24;G11C5/14;G11C11/407;H01L21/822;H03K5/08;(IPC1-7):G05F1/10 主分类号 H01L27/04
代理机构 代理人
主权项
地址