发明名称 |
High-voltage device and method for manufacturing high-voltage device |
摘要 |
A high-voltage device. A first well region with a first conductive type is located in a substrate. A second well region with the second conductive type is located in the substrate but is isolated from the first well region. Several field oxide layers are located on a surface of the second well region. A shallow trench isolation is located between the field oxide layers in the second well region. A first doped region with the second conductive type is located beneath the field oxide layers. A second doped region with the first conductive type is located beneath the shallow trench isolation in the second well region. A third well region with the first conductive type is located in the first well region and expands from a surface of the first well region into the first well region. A gate structure is positioned on the substrate between the first and the second well regions and covers a portion of the first, the third well regions and the field oxide layers. A source region with the second conductive type and a drain region with the second conductive type are respectively located in the third and the second well regions exposed by the gate structure and the field oxide layers.
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申请公布号 |
US6262459(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US20000484489 |
申请日期 |
2000.01.18 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TUNG MING-TSUNG |
分类号 |
H01L21/336;H01L21/762;H01L21/8238;H01L27/088;H01L27/092;H01L29/06;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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