| 摘要 |
An active matrix circuit using top-gate type thin-film transistors is characterized in that an auxiliary capacitor is formed between a black matrix and an N-type or P-type active layer, and uses, as a dielectric, a silicon nitride layer used as a passivation film of an interlayer insulator. Also, an active matrix circuit using bottom-gate type thin-film transistors is characterized in that two auxiliary capacitors. One of the auxiliary capacitors is formed between a capacitor wiring line formed on a substrate and an N-type or P-type conductive region or a metal wiring line connected to the conductive region, and uses a gate insulating film as a dielectric. The other one of the auxiliary capacitors is formed between a black matrix and said N-type or P-type conductive region or said metal wiring line connected to the conductive region, and uses a silicon nitride layer used as a passivation film as a dielectric. Said two auxiliary capacitors are located in three-dimension for preventing aperture ratio from lowering.
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