发明名称 SPUTTERING SYSTEM AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To attain a sputtering system capable of depositing, with superior coating on a portion different in height, a film composed of a metal or its compound on a contact hole of high aspect ratio. SOLUTION: An ion reflecting plate 5 capable of reflecting ions composed of target material is provided along the side wall of a sputter chamber 2, and a grounded lower ground parts 6 are provided under the plate, and further, a mechanism for applying negative voltage to a substrate 1 is provided.
申请公布号 JP2001192824(A) 申请公布日期 2001.07.17
申请号 JP20000166059 申请日期 2000.06.02
申请人 TOSHIBA CORP 发明人 WADA JUNICHI;SAKATA ATSUKO;WATANABE KOICHI;MATSUYAMA HIDETO;KATADA TOMIO
分类号 C23C14/04;C23C14/34;C23C14/35;H01J37/34;H01L21/203;H01L21/285;H01L21/768;(IPC1-7):C23C14/34 主分类号 C23C14/04
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