| 发明名称 |
Fast recovery diode and method for its manufacture |
| 摘要 |
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recovery characteristics without requiring heavy metal doping.
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| 申请公布号 |
US6261874(B1) |
申请公布日期 |
2001.07.17 |
| 申请号 |
US20000593333 |
申请日期 |
2000.06.14 |
| 申请人 |
INTERNATIONAL RECTIFIER CORP. |
发明人 |
FRANCIS RICHARD;NG CHIU |
| 分类号 |
H01L21/322;H01L21/329;H01L29/861;(IPC1-7):H01L21/332 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 主权项 |
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