发明名称 |
Easy to remove hard mask layer for semiconductor device fabrication |
摘要 |
A method for forming a patterned shape from a noble metal, in accordance with the present invention, includes forming a noble metal layer over a dielectric layer and patterning a hard mask layer on the noble metal layer. The hard mask layer includes a mask material that is selectively removable relative to the noble metal layer and the dielectric layer and capable of withstanding plasma etching. Alternately, the hard mask material may be consumable during the noble metal layer plasma etching. Plasma etching is performed on the noble metal layer in accordance with the patterned hard mask layer. The hard mask layer is removed such that a patterned shape formed in the noble metal layer remains intact after the plasma etching and the hard mask removal.
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申请公布号 |
US6261967(B1) |
申请公布日期 |
2001.07.17 |
申请号 |
US20000501479 |
申请日期 |
2000.02.09 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINE CORPORATION |
发明人 |
ATHAVALE SATISH D.;SHEN HUA;KOTECKI DAVID;LIAN JENNY |
分类号 |
H01L21/02;H01L21/033;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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