| 摘要 |
<p>PURPOSE:To provide a FET capable of reducing parasitic capacitance between a gate and a drain while having a single gate FET characteristic. CONSTITUTION:In a field-effect transistor, an active layer is provided in a surface side of a semiconductor substrate 1, and a gate electrode 5 and a gate electrode 5 are interposed between a source electrode 6 and a drain electrode 7. which are respectively provided on the active layer. A shield wire 9 is provided between the gate electrode 5 and the drain electrode 7.</p> |
